发明授权
US09099633B2 Solid electrolyte memory elements with electrode interface for improved performance
有权
具有电极接口的固体电解质存储元件,以提高性能
- 专利标题: Solid electrolyte memory elements with electrode interface for improved performance
- 专利标题(中): 具有电极接口的固体电解质存储元件,以提高性能
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申请号: US13850267申请日: 2013-03-25
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公开(公告)号: US09099633B2公开(公告)日: 2015-08-04
- 发明人: Chakravarthy Gopalan , Wei Ti Lee , Yi Ma , Jeffrey Allan Shields
- 申请人: Adesto Technologies Corporation
- 申请人地址: US CA Sunnyvale
- 专利权人: Adesto Technologies Corporation
- 当前专利权人: Adesto Technologies Corporation
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
A memory element can include a first electrode; a second electrode; and a memory material programmable between different resistance states, the memory material disposed between the first electrode and the second electrode and comprising a solid electrolyte with at least one modifier element formed therein; wherein the first electrode is an anode electrode that includes an anode element that is ion conductible in the solid electrolyte, the anode element being different than the modifier element.
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