Methods are provided for fabricating a fin-type field effect transistor(s), having a channel region within a fin. The methods include: establishing a protective material above an upper surface of the fin, and an isolation material adjacent to at least one sidewall of the fin, the isolation material being recessed down from the upper surface of the fin, for instance, for approximately a height of the channel region within the fin; and providing a punch-through stop dopant region within the fin below the channel region, the providing including implanting a punch-through stop dopant into the isolation material and laterally diffusing the punch-through stop dopant from the isolation material into the fin to form the punch-through stop region within the fin beneath the channel region.