Invention Grant
US09087776B2 Nitride-based semiconductor device and method of manufacturing nitride-based semiconductor device
有权
基于氮化物的半导体器件及其制造氮化物基半导体器件的方法
- Patent Title: Nitride-based semiconductor device and method of manufacturing nitride-based semiconductor device
- Patent Title (中): 基于氮化物的半导体器件及其制造氮化物基半导体器件的方法
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Application No.: US13945613Application Date: 2013-07-18
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Publication No.: US09087776B2Publication Date: 2015-07-21
- Inventor: Jae Hoon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0079360 20120720
- Main IPC: H01L29/267
- IPC: H01L29/267 ; H01L29/26 ; H01L29/423 ; H01L29/66 ; H01L29/778 ; H01L29/06 ; H01L29/20 ; H01L21/02
Abstract:
In a nitride-based semiconductor device, an undoped gallium nitride (GaN) layer is formed on an aluminum gallium nitride (AlGaN) layer, and a silicon carbon nitride (SixC1-xN) functional layer is formed on the undoped GaN layer.
Public/Granted literature
- US20140021488A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR DEVICE Public/Granted day:2014-01-23
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