发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13103353申请日: 2011-05-09
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公开(公告)号: US09087712B2公开(公告)日: 2015-07-21
- 发明人: Toru Matsuoka
- 申请人: Toru Matsuoka
- 申请人地址: JP Tokyo
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-207572 20100916
- 主分类号: H01L27/24
- IPC分类号: H01L27/24 ; H01L27/02 ; H01L29/08 ; H01L29/10 ; H01L29/41 ; H01L27/06 ; H01L25/07 ; H02M3/158
摘要:
The present invention provides a semiconductor device capable of selecting a desired circuit (step-down circuit (or step-up/step-down circuit) and step-up circuit) on the user side at low cost. A semiconductor device according to the present invention includes a diode element and a switching element (IGBT). An anode terminal of the diode element and one main electrode terminal of the switching element are adjacently arranged at a predetermined distance from each other. In addition, a cathode terminal of the diode element and the other main electrode terminal of the switching element are adjacently arranged at another predetermined distance from each other.
公开/授权文献
- US20120068329A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-03-22
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