发明授权
- 专利标题： Two-part programming methods
- 专利标题（中）： 两部分编程方法
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申请号： US13334339申请日： 2011-12-22
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公开(公告)号： US09087600B2公开(公告)日： 2015-07-21
- 发明人: Vishal Sarin , Allahyar Vahidimowlavi
- 申请人： Vishal Sarin , Allahyar Vahidimowlavi
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： G11C16/34
- IPC分类号： G11C16/34 ; G11C11/56 ; G11C16/10
摘要：
Programming a memory in two parts to reduce cell disturb is disclosed. In at least one embodiment, data is programmed in two or more sequences of programming pulses with data requiring higher programming voltages programmed first. During each programming sequence, the data which is not being currently selected for programming is inhibited. Overlapping levels and/or voltage ranges can be used.
公开/授权文献
- US20120092932A1 PROGRAMMING METHODS AND MEMORIES 公开/授权日：2012-04-19
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