Invention Grant
- Patent Title: Method of forming a conductive film
- Patent Title (中): 形成导电膜的方法
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Application No.: US14382457Application Date: 2013-02-28
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Publication No.: US09082618B2Publication Date: 2015-07-14
- Inventor: Tatsuya Shimoda , Jinwang Li
- Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Kawaguchi-shi
- Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee Address: JP Kawaguchi-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-046653 20120302
- International Application: PCT/JP2013/056207 WO 20130228
- International Announcement: WO2013/129701 WO 20130906
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/02 ; H01L29/24
Abstract:
A method of forming a conductive film, comprising the steps of: applying a composition comprising at least one metal compound selected from the group consisting of carboxylate salt, alkoxide, diketonato and nitrosylcarboxylate salt of a metal selected from among copper, palladium, rhodium, ruthenium, iridium, nickel and bismuth and a solvent to a substrate to form a coating film; and supplying a hydrogen radical to the coating film to carry out a hydrogen radical treatment.
Public/Granted literature
- US20150102340A1 METHOD OF FORMING A CONDUCTIVE FILM Public/Granted day:2015-04-16
Information query
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