Invention Grant
- Patent Title: Graphene nanoelectronic device fabrication
- Patent Title (中): 石墨烯纳米电子器件制造
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Application No.: US13847433Application Date: 2013-03-19
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Publication No.: US09082613B2Publication Date: 2015-07-14
- Inventor: Jonathan W. Ward , Michael J. O'Connor
- Applicant: Lockheed Martin Corporation
- Applicant Address: US MD Bethesda
- Assignee: Lockheed Martin Corporation
- Current Assignee: Lockheed Martin Corporation
- Current Assignee Address: US MD Bethesda
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/02 ; H01L21/311 ; B82Y30/00 ; B82Y40/00 ; C01B31/04
Abstract:
Methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices, is provided. One method includes the steps of preparing a dispersion of functionalized graphene in a solvent; and applying a coating of said dispersion onto a substrate and evaporating the solvent to form a layer of functionalized graphene; and defunctionalizing the graphene to form a graphene layer on the substrate.
Public/Granted literature
- US20130217215A1 GRAPHENE NANOELECTRONIC DEVICE FABRICATION Public/Granted day:2013-08-22
Information query
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