A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and a gate structure partially overlapping the fin-shaped structure is formed. Subsequently, a dielectric layer is blanketly formed on the substrate, and a part of the dielectric layer is removed to form a first spacer on the fin-shaped structure and a second spacer besides the fin-shaped structure. Furthermore, the second spacer and a part of the fin-shaped structure are removed to form at least a recess at a side of the gate structure, and an epitaxial layer is formed in the recess.