发明授权
- 专利标题： Method and apparatus for forming a CMOS device
- 专利标题（中）： 用于形成CMOS器件的方法和装置
-
申请号： US13894902申请日： 2013-05-15
-
公开(公告)号： US09064959B2公开(公告)日： 2015-06-23
- 发明人: Li-Ting Wang , Teng-Chun Tsai , Chun-Hsiung Lin , Cheng-Tung Lin , Chi-Yuan Chen , Kuo-Yin Lin , Wan-Chun Pan , Ming-Liang Yen , Huicheng Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/78 ; H01L29/66
摘要：
A method and apparatus for forming a CMOS device are provided. The CMOS device may include an N-type channel region formed of an III-V material and a P-type channel region formed of a germanium material. Over each channel may be formed corresponding gates and source/drain regions. The source/drain regions may be formed of a germanium material and one or more metallization layers. An anneal may be performed to form ohmic contacts for the source/drain regions. Openings may be formed in a dielectric layer covering the device and conductive plugs may be formed to provide contact to the source/drain regions.
公开/授权文献
- US20140264362A1 Method and Apparatus for Forming a CMOS Device 公开/授权日：2014-09-18
信息查询
IPC分类:
