发明授权
US09064694B2 Nitridation of atomic layer deposited high-k dielectrics using trisilylamine
有权
使用三甲胺沉积原子层沉积的高k电介质的氮化
- 专利标题： Nitridation of atomic layer deposited high-k dielectrics using trisilylamine
- 专利标题（中）： 使用三甲胺沉积原子层沉积的高k电介质的氮化
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申请号： US13941429申请日： 2013-07-12
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公开(公告)号： US09064694B2公开(公告)日： 2015-06-23
- 发明人: Steven P Consiglio , Robert D Clark , Christian Dussarrat , Vincent Omarjee , Venkat Pallem , Glenn Kuchenbeiser
- 申请人： Tokyo Electron Limited , Air Liquide America Corporation
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/469 ; C23C16/00 ; C23C16/30 ; C23C16/455 ; H01L21/28 ; H01L29/51
摘要：
A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film.
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