发明授权
- 专利标题: Stacked semiconductor package and method for manufacturing the same
- 专利标题(中): 堆叠半导体封装及其制造方法
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申请号: US14051679申请日: 2013-10-11
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公开(公告)号: US09030009B2公开(公告)日: 2015-05-12
- 发明人: Ki Il Moon , Jae Sung Oh
- 申请人: SK Hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: William Park & Associates Ltd.
- 优先权: KR10-2013-0066611 20130611
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/538 ; H01L23/00
摘要:
A stacked semiconductor package includes: a first semiconductor chip formed with a first through electrode, the first through electrode protruding above a first surface of the first semiconductor chip; a first polymer layer formed over the first surface of the first semiconductor chip such that the first through electrode is exposed by the first polymer layer; a second semiconductor chip having a first surface attached onto the first semiconductor chip by medium of the first polymer layer and a vial hole passing through the second semiconductor chip, the first surface of the second semiconductor chip being formed with a bonding pad having a through hole which corresponds to the first through electrode; and a second through electrode located within the through hole and the via hole and is electrically connected with the first through electrode.
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