发明授权
US09029172B2 On-chip poly-to-contact process monitoring and reliability evaluation system and method of use
有权
片上多点接触过程监控与可靠性评估系统及使用方法
- 专利标题： On-chip poly-to-contact process monitoring and reliability evaluation system and method of use
- 专利标题（中）： 片上多点接触过程监控与可靠性评估系统及使用方法
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申请号： US13354547申请日： 2012-01-20
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公开(公告)号： US09029172B2公开(公告)日： 2015-05-12
- 发明人: Fen Chen , Roger A. Dufresne , Timothy D. Sullivan , Yanfeng Wang
- 申请人： Fen Chen , Roger A. Dufresne , Timothy D. Sullivan , Yanfeng Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Michael Lestrange
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/66
摘要：
An on-chip poly-to-contact process monitoring and reliability evaluation system and method of use are provided. A method includes determining a breakdown electrical field of each of one or more shallow trench isolation (STI) measurement structures corresponding to respective one or more original semiconductor structures. The method further includes determining a breakdown voltage of each of one or more substrate measurement structures corresponding to the respective one or more original semiconductor structures. The method further includes determining a space between a gate and a contact of each of the one or more original semiconductor structures based on the determined breakdown electrical field and the determined breakdown voltage.
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