Invention Grant
US09009390B2 Method for changing read parameter for improving read performance and apparatuses using the same
有权
用于改变读取参数以提高读取性能的方法和使用其的装置
- Patent Title: Method for changing read parameter for improving read performance and apparatuses using the same
- Patent Title (中): 用于改变读取参数以提高读取性能的方法和使用其的装置
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Application No.: US13238749Application Date: 2011-09-21
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Publication No.: US09009390B2Publication Date: 2015-04-14
- Inventor: Seong Hyeog Choi , Hong Rak Son , Kyoung Lae Cho , Jun Jin Kong , Sang Hoon Lee
- Applicant: Seong Hyeog Choi , Hong Rak Son , Kyoung Lae Cho , Jun Jin Kong , Sang Hoon Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0096550 20101004
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/28 ; G11C16/02 ; G11C16/06 ; G11C29/42 ; G11C16/00 ; G11C11/56 ; G11C16/34
Abstract:
A memory system including a non-volatile memory device and a memory controller is provided. When a read operation on a first data initially output from the non-volatile memory device during a first read operation is successful, the memory controller may change a read voltage for reading a second data stored in the non-volatile memory device during a second read operation.
Public/Granted literature
- US20120084490A1 METHOD FOR CHANGING READ PARAMETER FOR IMPROVING READ PERFORMANCE AND APPARATUSES USING THE SAME Public/Granted day:2012-04-05
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