发明授权
US09000580B2 Power semiconductor module with pressed baseplate and method for producing a power semiconductor module with pressed baseplate
有权
具有压制基板的功率半导体模块和用于生产具有压制基板的功率半导体模块的方法
- 专利标题： Power semiconductor module with pressed baseplate and method for producing a power semiconductor module with pressed baseplate
- 专利标题（中）： 具有压制基板的功率半导体模块和用于生产具有压制基板的功率半导体模块的方法
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申请号： US13749884申请日： 2013-01-25
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公开(公告)号： US09000580B2公开(公告)日： 2015-04-07
- 发明人: Torsten Groening , Mark Essert , Christian Steininger , Roman Lennart Tschirbs
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102012201172 20120127
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L23/40 ; H01L21/50 ; H01L23/36 ; H01L23/373 ; H01L21/48 ; H01L23/31
摘要：
A power semiconductor module includes a baseplate having a top side, an underside, and a depression formed in the baseplate. The depression extends into the baseplate proceeding from the top side. A thickness of the baseplate is locally reduced in a region of the depression. The power semiconductor module further includes a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate.
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