Invention Grant
US08987798B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices
有权
磁隧道结设备，存储器，存储器系统和电子设备
- Patent Title: Magnetic tunneling junction devices, memories, memory systems, and electronic devices
- Patent Title (中): 磁隧道结设备，存储器，存储器系统和电子设备
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Application No.: US14306792Application Date: 2014-06-17
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Publication No.: US08987798B2Publication Date: 2015-03-24
- Inventor: Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- Applicant: Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0079627 20110810
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/10 ; G06F13/16
Abstract:
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
Public/Granted literature
- US20140297968A1 MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES Public/Granted day:2014-10-02
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