Invention Grant
- Patent Title: Semiconductor devices having a vertical diode and methods of manufacturing the same
- Patent Title (中): 具有垂直二极管的半导体器件及其制造方法
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Application No.: US13729742Application Date: 2012-12-28
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Publication No.: US08987694B2Publication Date: 2015-03-24
- Inventor: Jae-Jong Han , Kong-Soo Lee , Yoon-Goo Kang , Ho-Kyun An , Seong-Hoon Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR1020120002085 20120106
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L45/00 ; H01L27/102 ; H01L27/24 ; H01L27/10

Abstract:
Semiconductor devices, and methods of manufacturing the same, include a field region in a semiconductor substrate to define an active region. An interlayer insulating layer is on the semiconductor substrate. A semiconductor pattern is within a hole vertically extending through the interlayer insulating layer. The semiconductor pattern is in contact with the active region. A barrier region is between the semiconductor pattern and the interlayer insulating layer. The barrier region includes a first buffer dielectric material and a barrier dielectric material. The first buffer dielectric material is between the barrier dielectric material and the semiconductor pattern, and the barrier dielectric material is spaced apart from both the semiconductor pattern and the active region.
Public/Granted literature
- US20130175491A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2013-07-11
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