发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13915278申请日: 2013-06-11
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公开(公告)号: US08963329B2公开(公告)日: 2015-02-24
- 发明人: Masahiro Ito
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Foley & Lardner LLP
- 优先权: JP2012-132613 20120612
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; G11C5/00 ; H01L25/065 ; H01L25/18 ; H01L23/12 ; H05K1/02 ; H05K1/00
摘要:
Provided is a semiconductor device capable of increasing the number of signals. A semiconductor device according to an embodiment of the invention includes memories; a controller that designates addresses of the memories; a mounting board having lines formed thereon, the lines connecting the controller with the memories; and a first ball group that connects the controller with the lines of the mounting board. A plurality of address lines formed on the mounting board includes an address line formed of a front surface wiring layer, and an address line formed of a back surface wiring layer. In each of the front surface wiring layer and the back surface wiring layer, each of the address lines from first balls of the first ball group is routed in order from a first memory to a fourth memory.
公开/授权文献
- US20130328193A1 SEMICONDUCTOR DEVICE 公开/授权日:2013-12-12
信息查询
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