发明授权
US08962480B2 ESD network circuit with a through wafer via structure and a method of manufacture
有权
具有通过晶片通孔结构的ESD网络电路和制造方法
- 专利标题： ESD network circuit with a through wafer via structure and a method of manufacture
- 专利标题（中）： 具有通过晶片通孔结构的ESD网络电路和制造方法
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申请号： US13487904申请日： 2012-06-04
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公开(公告)号： US08962480B2公开(公告)日： 2015-02-24
- 发明人: Steven H. Voldman
- 申请人： Steven H. Voldman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L27/02 ; H01L23/48 ; H01L23/522 ; H01L23/58 ; H01L23/60 ; H01L25/065
摘要：
A method includes forming an ESD active device on a substrate, forming a ground plane on a backside of the substrate and forming at least one through wafer via electrically connected to a negative power supply of the ESD active device and the ground plane to provide a low series resistance path to the substrate.
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