发明授权
- 专利标题： Method for forming an air gap around a through-silicon via
- 专利标题（中）： 在通过硅通孔周围形成气隙的方法
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申请号： US13290791申请日： 2011-11-07
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公开(公告)号： US08962474B2公开(公告)日： 2015-02-24
- 发明人: Hong Yu , Huang Liu
- 申请人： Hong Yu , Huang Liu
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Ditthavong & Steiner, P.C.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/768 ; H01L23/48
摘要：
Semiconductor devices with air gaps around the through-silicon via are formed. Embodiments include forming a first cavity in a substrate, filling the first cavity with a sacrificial material, forming a second cavity in the substrate, through the sacrificial material, by removing a portion of the sacrificial material and a portion of the substrate below the sacrificial material, filling the second cavity with a conductive material, removing a remaining portion of the sacrificial material to form an air gap between the conductive material and the substrate, and forming a cap over the air gap.
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