Invention Grant
US08962429B2 Integrated circuits with improved spacers and methods for fabricating same
有权
具有改进间隔物的集成电路及其制造方法
- Patent Title: Integrated circuits with improved spacers and methods for fabricating same
- Patent Title (中): 具有改进间隔物的集成电路及其制造方法
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Application No.: US13572343Application Date: 2012-08-10
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Publication No.: US08962429B2Publication Date: 2015-02-24
- Inventor: Stefan Flachowsky , Jan Hoentschel
- Applicant: Stefan Flachowsky , Jan Hoentschel
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes simultaneously shielding a shielded region of a semiconductor substrate and exposing a surface of the shielded region of the semiconductor substrate. An ion implantation is performed to form implant areas in a non-shielded region of the semiconductor substrate adjacent the shielded region. Also, the semiconductor substrate is silicided to form a silicided area in the shielded region of the semiconductor substrate.
Public/Granted literature
- US20140042550A1 INTEGRATED CIRCUITS WITH IMPROVED SPACERS AND METHODS FOR FABRICATING SAME Public/Granted day:2014-02-13
Information query
IPC分类:
