发明授权
- 专利标题： Schottky barrier diode having a trench structure
- 专利标题（中）： 具有沟槽结构的肖特基势垒二极管
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申请号： US13952741申请日： 2013-07-29
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公开(公告)号： US08957461B2公开(公告)日： 2015-02-17
- 发明人: Tomonori Mizushima , Michio Nemoto
- 申请人： Fuji Electric Co., Ltd.
- 申请人地址： JP
- 专利权人： Fuji Electric Co., Ltd.
- 当前专利权人： Fuji Electric Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Rossi, Kimms & McDowell LLP
- 优先权： JP2010-000469 20100105
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/06 ; H01L29/40
摘要：
A TMBS diode is disclosed. In an active portion and voltage withstanding structure portion of the diode, an end portion trench surrounds active portion trenches. An active end portion which is an outer circumferential side end portion of an anode electrode is in contact with conductive polysilicon inside the end portion trench. A guard trench is separated from the end portion trench and surrounds it. A field plate provided on an outer circumferential portion of the anode electrode is separated from the anode electrode, and contacts both part of a surface of n-type drift layer in a mesa region between the end portion trench and the guard trench and the conductive polysilicon formed inside the guard trench. The semiconductor device has high withstand voltage without injection of minority carriers, and relaxed electric field intensity of the trench formed in an end portion of an active portion.
公开/授权文献
- US20130307111A1 SCHOTTKY BARRIER DIODE HAVING A TRENCH STRUCTURE 公开/授权日：2013-11-21
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