Invention Grant
- Patent Title: Through silicon via structure
- Patent Title (中): 通过硅通孔结构
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Application No.: US14221001Application Date: 2014-03-20
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Publication No.: US08952506B2Publication Date: 2015-02-10
- Inventor: Chen-Hua Yu , Shin-Puu Jeng , Wen-Chih Chiou , Fang Wen Tsai , Chen-Yu Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; H01L23/00 ; H01L21/683 ; H01L25/065
Abstract:
A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the sidewalls of the through silicon via. Conductive material may then be formed in contact with both the sidewalls and a top surface of the through silicon via.
Public/Granted literature
- US20140203439A1 Through Silicon Via Structure and Method Public/Granted day:2014-07-24
Information query
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