Invention Grant
US08952423B2 Semiconductor device having decoupling capacitors and dummy transistors
有权
具有去耦电容器和虚拟晶体管的半导体器件
- Patent Title: Semiconductor device having decoupling capacitors and dummy transistors
- Patent Title (中): 具有去耦电容器和虚拟晶体管的半导体器件
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Application No.: US13785156Application Date: 2013-03-05
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Publication No.: US08952423B2Publication Date: 2015-02-10
- Inventor: Joong-Won Jeon , Hee-Sung Kang , Dae-Ho Yoon , Dal-Hee Lee , Suk-Joo Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0060049 20120604
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/94
Abstract:
A semiconductor device includes a logic region disposed in a central region of the semiconductor device, and a peripheral region disposed in an outer region thereof. The logic region includes a line-shaped logic transistor and a box-shaped decoupling capacitor. The peripheral region includes a line-shaped peripheral transistor and a line-shaped peripheral dummy transistor disposed adjacent to the peripheral transistor.
Public/Granted literature
- US20130320405A1 SEMICONDUCTOR DEVICE HAVING DECOUPLING CAPACITORS AND DUMMY TRANSISTORS Public/Granted day:2013-12-05
Information query
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