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US08947930B2 Semiconductor memory device for storing multivalued data 有权
用于存储多值数据的半导体存储器件

Semiconductor memory device for storing multivalued data
摘要:
Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction.
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