发明授权
- 专利标题: Semiconductor memory device for storing multivalued data
- 专利标题(中): 用于存储多值数据的半导体存储器件
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申请号: US14266275申请日: 2014-04-30
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公开(公告)号: US08947930B2公开(公告)日: 2015-02-03
- 发明人: Noboru Shibata , Tomoharu Tanaka
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2002-347797 20021129; JP2003-402161 20031201
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C11/56 ; G11C16/04 ; G11C16/12 ; G11C16/34
摘要:
Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction.
公开/授权文献
- US20140233312A1 SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTIVALUED DATA 公开/授权日:2014-08-21
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