A method of forming one or more diodes in a fin field-effect transistor (FinFET) device includes forming a hardmask layer having a fin pattern, said fin pattern including an isolated fin area, a fin array area, and a FinFET area. The method further includes etching a plurality of fins into a semiconductor substrate using the fin pattern, and depositing a dielectric material over the semiconductor substrate to fill spaces between the plurality of fins. The method further includes planarizing the semiconductor substrate to expose the hardmask layer. The method further includes implanting a p-type dopant into the fin array area and portions of the FinFET area, and implanting an n-type dopant into the isolated fin area, a portion of the of fin array area surrounding the p-well and portions of the FinFET area. The method further includes annealing the semiconductor substrate.