发明授权
- 专利标题： Compound barrier layer, method for forming the same and package structure using the same
- 专利标题（中）： 复合阻挡层，其形成方法和使用其的封装结构
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申请号： US13728544申请日： 2012-12-27
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公开(公告)号： US08937394B2公开(公告)日： 2015-01-20
- 发明人: Chun-Ting Chen , Li-Wen Lai , Kun-Wei Lin , Teng-Yen Wang
- 申请人： Industrial Technology Research Institute
- 申请人地址： TW Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： TW101130751A 20120824
- 主分类号： H01L23/29
- IPC分类号： H01L23/29 ; H01L23/31 ; H01L21/56 ; H01L51/00 ; H01L51/52
摘要：
An embodiment of the invention provides a compound barrier layer, including: a first barrier layer disposed on a substrate; and a second barrier layer disposed on the first barrier layer, wherein the first barrier layer and second barrier layer both include a plurality of alternately arranged inorganic material regions and organo-silicon material regions and the inorganic material regions and the organo-silicon material regions of the first barrier layer and second barrier layer are alternatively stacked vertically.
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