发明授权
US08934304B2 Operating method of nonvolatile memory device and operating method of memory system including nonvolatile memory device
有权
非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统的操作方法
- 专利标题： Operating method of nonvolatile memory device and operating method of memory system including nonvolatile memory device
- 专利标题（中）： 非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统的操作方法
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申请号： US13471485申请日： 2012-05-15
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公开(公告)号： US08934304B2公开(公告)日： 2015-01-13
- 发明人: Hyunsoo Cho , Kyoungil Bang
- 申请人： Hyunsoo Cho , Kyoungil Bang
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2011-0045877 20110516
- 主分类号： G11C11/406
- IPC分类号： G11C11/406 ; G11C16/10 ; G11C16/34
摘要：
A nonvolatile memory device includes a plurality of memory cells and a plurality of monitor cells. The method of operating the device includes erasing the plurality of memory cells and the plurality of monitor cells, programming at least one first memory cell among the plurality of memory cells to a first program state, programming at least one first monitor cell among the plurality of monitor cells to the first program state, and refreshing data stored in the plurality of memory cells according to a result read from the at least one first monitor cell during a read operation of the at least one first monitor cell.
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