Invention Grant
US08928365B2 Methods and devices for matching transmission line characteristics using stacked metal oxide semiconductor (MOS) transistors
有权
使用叠层金属氧化物半导体（MOS）晶体管匹配传输线特性的方法和装置
- Patent Title: Methods and devices for matching transmission line characteristics using stacked metal oxide semiconductor (MOS) transistors
- Patent Title (中): 使用叠层金属氧化物半导体（MOS）晶体管匹配传输线特性的方法和装置
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Application No.: US13658778Application Date: 2012-10-23
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Publication No.: US08928365B2Publication Date: 2015-01-06
- Inventor: Miao Li , Jingcheng Zhuang , Yan Hu , Xiaoliang Bai , Jing Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Paul S. Holdaway
- Main IPC: H03K3/00
- IPC: H03K3/00
Abstract:
An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.
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