发明授权
- 专利标题： Copper bump structures having sidewall protection layers
- 专利标题（中）： 铜凸块结构具有侧壁保护层
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申请号： US12846260申请日： 2010-07-29
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公开(公告)号： US08922004B2公开(公告)日： 2014-12-30
- 发明人: Jing-Cheng Lin , Ya-Hsi Hwung , Hsin-Yu Chen , Po-Hao Tsai , Yan-Fu Lin , Cheng-Lin Huang , Fang Wen Tsai , Wen-Chih Chiou
- 申请人： Jing-Cheng Lin , Ya-Hsi Hwung , Hsin-Yu Chen , Po-Hao Tsai , Yan-Fu Lin , Cheng-Lin Huang , Fang Wen Tsai , Wen-Chih Chiou
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/488 ; H01L23/00 ; H01L25/065
摘要：
A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.
公开/授权文献
- US20110304042A1 Copper Bump Structures Having Sidewall Protection Layers 公开/授权日：2011-12-15
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