发明授权
- 专利标题： Metal gate finFET device and method of fabricating thereof
- 专利标题（中）： 金属栅finFET器件及其制造方法
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申请号： US13475297申请日： 2012-05-18
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公开(公告)号： US08921218B2公开(公告)日： 2014-12-30
- 发明人: Yu-Lin Yang , Tsu-Hsiu Perng , Chih Chieh Yeh , Li-Shyue Lai
- 申请人： Yu-Lin Yang , Tsu-Hsiu Perng , Chih Chieh Yeh , Li-Shyue Lai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L29/78
摘要：
A method and device including a substrate having a fin. A metal gate structure is formed on the fin. The metal gate structure includes a stress metal layer formed on the fin such that the stress metal layer extends to a first height from an STI feature, the first height being greater than the fin height. A conduction metal layer is formed on the stress metal layer.
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