Invention Grant
- Patent Title: 3D transmission lines for semiconductors
- Patent Title (中): 用于半导体的3D传输线
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Application No.: US13415906Application Date: 2012-03-09
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Publication No.: US08912581B2Publication Date: 2014-12-16
- Inventor: Yu-Ling Lin , Hsiao-Tsung Yen , Feng Wei Kuo , Ho-Hsiang Chen , Chin-Wei Kuo
- Applicant: Yu-Ling Lin , Hsiao-Tsung Yen , Feng Wei Kuo , Ho-Hsiang Chen , Chin-Wei Kuo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L39/00 ; H01L29/40 ; H01L23/60
Abstract:
A transmission line structure for semiconductor RF and wireless circuits, and method for forming the same. The transmission line structure includes embodiments having a first die including a first substrate, a first insulating layer, and a ground plane, and a second die including a second substrate, a second insulating layer, and a signal transmission line. The second die may be positioned above and spaced apart from the first die. An underfill is disposed between the ground plane of the first die and the signal transmission line of the second die. Collectively, the ground plane and transmission line of the first and second die and underfill forms a compact transmission line structure. In some embodiments, the transmission line structure may be used for microwave applications.
Public/Granted literature
- US20130234305A1 3D TRANSMISSION LINES FOR SEMICONDUCTORS Public/Granted day:2013-09-12
Information query
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