发明授权
US08896100B2 III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
有权
III族氮化物结构及制造III族氮化物半导体微细柱状晶体的方法
- 专利标题： III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
- 专利标题（中）： III族氮化物结构及制造III族氮化物半导体微细柱状晶体的方法
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申请号： US12676061申请日： 2008-08-27
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公开(公告)号： US08896100B2公开(公告)日： 2014-11-25
- 发明人: Katsumi Kishino , Akihiko Kikuchi
- 申请人： Katsumi Kishino , Akihiko Kikuchi
- 申请人地址： JP Tokyo
- 专利权人： Sophia School Corporation
- 当前专利权人： Sophia School Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2007-227935 20070903
- 国际申请： PCT/JP2008/002322 WO 20080827
- 国际公布： WO2009/031276 WO 20090312
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/02 ; C30B29/60 ; C30B23/00 ; C30B29/40
摘要：
A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.
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