发明授权
US08889460B2 Sidewall for backside illuminated image sensor metal grid and method of manufacturing same
有权
背面照明图像传感器金属网格的侧壁及其制造方法
- 专利标题: Sidewall for backside illuminated image sensor metal grid and method of manufacturing same
- 专利标题(中): 背面照明图像传感器金属网格的侧壁及其制造方法
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申请号: US14087133申请日: 2013-11-22
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公开(公告)号: US08889460B2公开(公告)日: 2014-11-18
- 发明人: Hung-Wen Hsu , Shih-Chang Liu , Yeur-Luen Tu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.
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