发明授权
US08879318B2 Method of storing data in nonvolatile memory device and method of operating nonvolatile memory device
有权
在非易失性存储器件中存储数据的方法和操作非易失性存储器件的方法
- 专利标题： Method of storing data in nonvolatile memory device and method of operating nonvolatile memory device
- 专利标题（中）： 在非易失性存储器件中存储数据的方法和操作非易失性存储器件的方法
-
申请号： US13545127申请日： 2012-07-10
-
公开(公告)号： US08879318B2公开(公告)日： 2014-11-04
- 发明人: Jung-Ro Ahn , Bong-Yong Lee , Hae-Bum Lee , Eui-Do Kim , Houng-Kuk Jang , Kyung-Jun Shin , Tae-Hyun Yoon
- 申请人： Jung-Ro Ahn , Bong-Yong Lee , Hae-Bum Lee , Eui-Do Kim , Houng-Kuk Jang , Kyung-Jun Shin , Tae-Hyun Yoon
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2011-0068743 20110712
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/34
摘要：
In a method of storing data in a nonvolatile memory device, a program operation is performed on target memory cells among a plurality of memory cells based on a program voltage. A verification operation is performed on the target memory cells based on a verification voltage to determine whether all of the target memory cells are completely programmed. The verification voltage is changed depending on the program operation.
公开/授权文献
信息查询
