发明授权
US08878301B2 Semiconductor device with transistors having different source/drain region depths
有权
具有晶体管的半导体器件具有不同的源极/漏极区域深度
- 专利标题： Semiconductor device with transistors having different source/drain region depths
- 专利标题（中）： 具有晶体管的半导体器件具有不同的源极/漏极区域深度
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申请号： US13186163申请日： 2011-07-19
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公开(公告)号： US08878301B2公开(公告)日： 2014-11-04
- 发明人: Yuichi Hirano
- 申请人： Yuichi Hirano
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2010-201885 20100909
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/8238 ; H01L21/8234
摘要：
A semiconductor device includes core transistors for forming a logic circuit, and I/O transistors for forming an input/output circuit. A distance from the main surface to a lowermost part of an n-type impurity region NR of the I/O n-type transistor is longer than that from the main surface to a lowermost part of an n-type impurity region NR of the core n-type transistor. A distance from the main surface to a lowermost part of a p-type impurity region PR of the I/O p-type transistor is longer than that from the main surface to a lowermost part of a p-type impurity region of the core p-type transistor. A distance from the main surface to the lowermost part of the n-type impurity region of the I/O n-type transistor is longer than that from the main surface to the lowermost part of the p-type impurity region of the I/O p-type transistor.
公开/授权文献
- US20120061767A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2012-03-15
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