发明授权
US08878273B2 Semiconductor memory device including narrower storage node contact plugs
有权
半导体存储器件包括较窄的存储节点接触插头
- 专利标题： Semiconductor memory device including narrower storage node contact plugs
- 专利标题（中）： 半导体存储器件包括较窄的存储节点接触插头
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申请号： US13369900申请日： 2012-02-09
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公开(公告)号： US08878273B2公开(公告)日： 2014-11-04
- 发明人: Daeik Kim , Sooho Shin
- 申请人： Daeik Kim , Sooho Shin
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR10-2011-0017869 20110228
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L27/108
摘要：
A semiconductor memory device includes an active region protruding from a substrate. The active region includes first and second doped regions therein and a trench therein separating the first and second doped regions. A buried gate structure extends in a first direction along the trench between first and second opposing sidewalls thereof. A conductive interconnection plug is provided on the first doped region adjacent the first sidewall of the trench, and a conductive landing pad is provided on the second doped region adjacent the second sidewall of the trench. The landing pad has a width greater than that of the second doped region of the active region along the first direction. A conductive storage node contact plug is provided on the landing pad opposite the second doped region. The storage node contact plug has a narrower width than the landing pad along the first direction.
公开/授权文献
- US20120217559A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2012-08-30
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