发明授权
US08878260B2 Devices with gate-to-gate isolation structures and methods of manufacture 有权
具有栅极到栅极隔离结构的器件和制造方法

Devices with gate-to-gate isolation structures and methods of manufacture
摘要:
A method includes forming a plurality of trenches in a pad film to form raised portions, and depositing a hard mask in the trenches and over the upper pad film. The method includes forming a plurality of fins including the raised portions and a second plurality of fins including the hard mask deposited in the trenches, each of which are separated by a deep trench. The method includes removing the hard mask on the plurality of fins including the raised portions and the second plurality of fins resulting in a dual height fin array. The method includes forming gate electrodes within each deep trench between each fin of the dual height fin array, burying the second plurality of fins and abutting sides of the plurality of fins including the raised portions. The plurality of fins including the raised portions electrically and physically isolate adjacent gate electrode of the gate electrodes.
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