发明授权
- 专利标题: Semiconductor light-emitting device and method for manufacturing the same
- 专利标题(中): 半导体发光装置及其制造方法
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申请号: US14054868申请日: 2013-10-16
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公开(公告)号: US08878218B2公开(公告)日: 2014-11-04
- 发明人: Kosuke Sato , Yoshitaka Sumitomo , Dai Wakamatsu , Yoshiyuki Aihara , Kimihiro Miyamoto , Satoshi Kinoshita
- 申请人: Nichia Corporation
- 申请人地址: JP Tokushima
- 专利权人: Nichia Corporation
- 当前专利权人: Nichia Corporation
- 当前专利权人地址: JP Tokushima
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2012-229818 20121017
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/10
摘要:
The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate.
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