发明授权
- 专利标题: Display device and method for manufacturing the same
- 专利标题(中): 显示装置及其制造方法
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申请号: US13273802申请日: 2011-10-14
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公开(公告)号: US08878184B2公开(公告)日: 2014-11-04
- 发明人: Kunio Hosoya
- 申请人: Kunio Hosoya
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2007-314123 20071205
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L27/12 ; G02F1/1368 ; H01L27/13
摘要:
A display device having the high aperture ratio and a storage capacitor with high capacitance is to be obtained. The present invention relates to a display device and a manufacturing method thereof. The display device includes a thin film transistor which includes a gate electrode, a gate insulating film, a first semiconductor layer, a channel protective film, a second semiconductor having conductivity which is divided into a source region and a drain region, and a source electrode and a drain electrode; a third insulating layer formed over the second conductive film; a pixel electrode formed over the third insulating layer, which is connected to one of the source electrode and the drain electrode; and a storage capacitor formed in a region where a capacitor wiring over the first insulating layer and the pixel electrode are overlapped with the third insulating layer over the capacitor wiring interposed therebetween.
公开/授权文献
- US20120032177A1 Display Device and Method for Manufacturing the Same 公开/授权日:2012-02-09
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