发明授权
- 专利标题： Patterning method and method of forming memory device
- 专利标题（中）： 形成存储器件的图案化方法和方法
-
申请号： US13858094申请日： 2013-04-08
-
公开(公告)号： US08877647B2公开(公告)日： 2014-11-04
- 发明人: Jen-Hsiang Tsai
- 申请人： Winbond Electronics Corp.
- 申请人地址： TW Taichung
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Taichung
- 代理机构： Jianq Chyun IP Office
- 优先权： TW102107353A 20130301
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A method of forming memory device is provided. A substrate having at least two cell areas and at least one peripheral area between the cell areas is provided. A target layer, a sacrificed layer and a first mask layer having first mask patterns in the cell areas and second mask patterns in the peripheral area are sequentially formed on the substrate. Sacrificed layer is partially removed to form sacrificed patterns by using the first mask layer as a mask. Spacers are formed on sidewalls of the sacrificed patterns. The sacrificed patterns and at least the spacers in the peripheral area are removed. A second mask layer is formed in the cell areas. Target layer is partially removed, using the second mask layer and remaining spacers as a mask, to form word lines in the cell areas and select gates in a portion of cell areas adjacent to the peripheral area.
公开/授权文献
- US20140248773A1 PATTERNING METHOD AND METHOD OF FORMING MEMORY DEVICE 公开/授权日：2014-09-04
信息查询
IPC分类:
