The invention is an electronic device including a ferroelectric random access memory (FRAM), a first supply voltage domain, a second supply voltage domain and a low drop output voltage regulator (LDO) receive a first supply voltage of the first supply voltage domain and providing a second supply voltage of the second supply voltage domain. The second supply voltage domain supplies the FRAM. The LDO switches between a first state providing and maintaining the second supply voltage of the second supply voltage domain and a second state providing a high impedance output to the second supply voltage domain. The electronic device switches the LDO from the first state to the second state in response to a failure of the first supply voltage domain.