Invention Grant
US08853035B2 Tucked active region without dummy poly for performance boost and variation reduction
有权
带虚拟聚合物的带状活性区域用于性能提升和变异减少
- Patent Title: Tucked active region without dummy poly for performance boost and variation reduction
- Patent Title (中): 带虚拟聚合物的带状活性区域用于性能提升和变异减少
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Application No.: US13253375Application Date: 2011-10-05
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Publication No.: US08853035B2Publication Date: 2014-10-07
- Inventor: Xiaojun Yu , Brian J. Greene , Yue Liang
- Applicant: Xiaojun Yu , Brian J. Greene , Yue Liang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L29/66 ; H01L29/165 ; H01L21/28
Abstract:
In one embodiment, a semiconductor device is provided that includes a semiconductor substrate including an active region and at least one trench isolation region at a perimeter of the active region, and a functional gate structure present on a portion of the active region of the semiconductor substrate. Embedded semiconductor regions are present in the active region of the semiconductor substrate on opposing sides of the portion of the active region that the functional gate structure is present on. A portion of the active region of the semiconductor substrate separates the outermost edge of the embedded semiconductor regions from the at least one isolation region. Methods of forming the aforementioned device are also provided.
Public/Granted literature
- US20130087832A1 Tucked Active Region Without Dummy Poly For Performance Boost and Variation Reduction Public/Granted day:2013-04-11
Information query
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