发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13722306申请日： 2012-12-20
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公开(公告)号： US08847632B2公开(公告)日： 2014-09-30
- 发明人: Shigeyuki Suzuki , Masato Suzuki
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Kanagawa Kawasaki-Shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa Kawasaki-Shi
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2012-056959 20120314
- 主分类号： H03K3/00
- IPC分类号： H03K3/00 ; H03K19/0185 ; H03K5/01
摘要：
Provided is a semiconductor device with an output circuit in which a variation of a common voltage is suppressed in an idling mode and in a normal mode. The output circuit provided in the semiconductor device includes a first termination resistor and a second termination resistor and a drive circuit which flows current through the termination resistors. The output circuit is configured so as to be able to adjust the value of current which flows through the first termination resistor and the second termination resistor or the value of resistance of the first termination resistor and the second termination resistor.
公开/授权文献
- US20130241620A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-09-19
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