Invention Grant
US08841681B2 Wide-gap semiconductor substrate and method to fabricate wide-gap semiconductor device using the same
有权
宽间隙半导体衬底和使用其制造宽间隙半导体器件的方法
- Patent Title: Wide-gap semiconductor substrate and method to fabricate wide-gap semiconductor device using the same
- Patent Title (中): 宽间隙半导体衬底和使用其制造宽间隙半导体器件的方法
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Application No.: US12984106Application Date: 2011-01-04
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Publication No.: US08841681B2Publication Date: 2014-09-23
- Inventor: Masahiko Kuraguchi
- Applicant: Masahiko Kuraguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-158907 20100713
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/66 ; G03F9/00
Abstract:
A wide-gap semiconductor substrate includes a narrow-gap semiconductor layer, a wide-gap semiconductor layer and an alignment mark. The narrow-gap semiconductor layer has a main surface. The wide-gap semiconductor layer is epitaxially grown on the narrow-gap semiconductor layer. The alignment mark is preliminarily carved in a prescribed position on the main surface so that the alignment mark is preliminarily buried in the wide-gap semiconductor substrate.
Public/Granted literature
- US20120012857A1 WIDE-GAP SEMICONDUCTOR SUBSTRATE AND METHOD TO FABRICATE WIDE-GAP SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2012-01-19
Information query
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