Invention Grant
- Patent Title: Method of forming polycrystalline silicon layer, and thin film transistor and organic light emitting device including the polycrystalline silicon layer
- Patent Title (中): 形成多晶硅层的方法以及包括多晶硅层的薄膜晶体管和有机发光器件
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Application No.: US13211700Application Date: 2011-08-17
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Publication No.: US08841206B2Publication Date: 2014-09-23
- Inventor: Byoung-Keon Park , Jong-Ryuk Park , Yun-Mo Chung , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung
- Applicant: Byoung-Keon Park , Jong-Ryuk Park , Yun-Mo Chung , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0086511 20100903
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/02 ; H01L29/786 ; H01L29/66 ; H01L27/32
Abstract:
A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.
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