Invention Grant
- Patent Title: Planar mirco-tube discharger structure and method for fabricating the same
- Patent Title (中): 平面微管放电器结构及其制造方法
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Application No.: US13464506Application Date: 2012-05-04
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Publication No.: US08829775B2Publication Date: 2014-09-09
- Inventor: Tung-Yang Chen , Ming-Dou Ker , Ryan Hsin-Chin Jiang
- Applicant: Tung-Yang Chen , Ming-Dou Ker , Ryan Hsin-Chin Jiang
- Applicant Address: TW New Taipei
- Assignee: Amazing Microelectric Corp.
- Current Assignee: Amazing Microelectric Corp.
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101106427A 20120224
- Main IPC: H01J1/88
- IPC: H01J1/88 ; H01J19/42 ; H01J1/00 ; H01J1/18

Abstract:
The present invention discloses a semiconductor-based planar micro-tube discharger structure and a method for fabricating the same. The method comprises steps: forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap; forming an insulating layer over the patterned electrodes and the separating block and filling the insulating layer into the gap. Thereby are formed at least two discharge paths. The method can fabricate a plurality discharge paths in a semiconductor structure. Therefore, the structure of the present invention has very high reliability and reusability.
Public/Granted literature
- US20130221834A1 PLANAR MIRCO-TUBE DISCHARGER STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-08-29
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