发明授权
- 专利标题: Robust high aspect ratio semiconductor device
- 专利标题(中): 坚固的高纵横比半导体器件
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申请号: US13121268申请日: 2009-09-24
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公开(公告)号: US08809982B2公开(公告)日: 2014-08-19
- 发明人: Freddy Roozeboom , Martijn Goossens , Willem Frederik Adrianus Besling , Nynke Verhaegh
- 申请人: Freddy Roozeboom , Martijn Goossens , Willem Frederik Adrianus Besling , Nynke Verhaegh
- 申请人地址: NL Eindhoven
- 专利权人: NXP B.V.
- 当前专利权人: NXP B.V.
- 当前专利权人地址: NL Eindhoven
- 优先权: EP08165540 20080930
- 国际申请: PCT/IB2009/054178 WO 20090924
- 国际公布: WO2010/038174 WO 20100408
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; B81B3/00 ; B81C1/00 ; H01L29/41 ; H01L49/02
摘要:
The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.
公开/授权文献
- US20110180931A1 ROBUST HIGH ASPECT RATIO SEMICONDUCTOR DEVICE 公开/授权日:2011-07-28
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