Invention Grant
- Patent Title: Methods of integrated shielding into MTJ device for MRAM
- Patent Title (中): 用于MRAM的MTJ设备的集成屏蔽方法
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Application No.: US14036354Application Date: 2013-09-25
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Publication No.: US08796046B2Publication Date: 2014-08-05
- Inventor: Wei-Chuan Chen , Xia Li , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/82 ; G11C11/16 ; H01L27/22 ; H01L27/115 ; H01L43/08
Abstract:
Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.
Public/Granted literature
- US20140021570A1 METHODS OF INTEGRATED SHIELDING INTO MTJ DEVICE FOR MRAM Public/Granted day:2014-01-23
Information query
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