Invention Grant
US08791447B2 Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
有权
非易失性存储单元的阵列和形成非易失性存储单元阵列的方法
- Patent Title: Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
- Patent Title (中): 非易失性存储单元的阵列和形成非易失性存储单元阵列的方法
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Application No.: US13010048Application Date: 2011-01-20
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Publication No.: US08791447B2Publication Date: 2014-07-29
- Inventor: Zengtao T. Liu , David H. Wells
- Applicant: Zengtao T. Liu , David H. Wells
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A nonvolatile memory cell includes first and second electrodes. Programmable material and a select device are received in series between and with the first and second electrodes. Current conductive material is in series between and with the programmable material and the select device. An array of vertically stacked tiers of such nonvolatile memory cells is disclosed. Methods of forming arrays of nonvolatile memory cells are disclosed.
Public/Granted literature
- US20120187363A1 Arrays Of Nonvolatile Memory Cells And Methods Of Forming Arrays Of Nonvolatile Memory Cells Public/Granted day:2012-07-26
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