Invention Grant
- Patent Title: Method of cleaning silicon carbide semiconductor
- Patent Title (中): 清洁碳化硅半导体的方法
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Application No.: US13390869Application Date: 2011-02-25
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Publication No.: US08785301B2Publication Date: 2014-07-22
- Inventor: Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
- Applicant: Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JP2010-136871 20100616
- International Application: PCT/JP2011/054275 WO 20110225
- International Announcement: WO2011/158529 WO 20111222
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/31
Abstract:
A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.
Public/Granted literature
- US20120149175A1 METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR Public/Granted day:2012-06-14
Information query
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